(Hong Kong)
Product Summary
The BAV99E6327 is a Silicon Switching Diode.
Parametrics
BAV99E6327 absolute maximum ratings: (1)Diode reverse voltage VR: 80V; (2)Peak reverse voltage VRM: 85V; (3)Forward current IF: 200mA; (4)Non-repetitive peak surge forward current t = 1μs: 4.5A; (5)t = 1ms: 1A; (6)t = 1s, single: 0.5A; (7)t = 1s, double: 0.75A; (8)Total power dissipation BAV99, TS ≤ 28℃: 330mW; (9)BAV99S, TS ≤ 85℃: 250mW; (10)BAV99U, TS ≤ 113℃: 250mW; (11)BAV99W, TS ≤ 110℃: 250mW; (12)Junction temperature Tj: 150℃; (13)Storage temperature Tstg: -65℃ to 150℃.
Features
BAV99E6327 features: (1)For high-speed switching applications; (2)Series pair configuration; (3)BAV99S / U: For orientation in reel see package information below; (4)Pb-free (RoHS compliant) package1); (5)Qualified according AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BAV99E6327 |
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DIODE SWITCHING 80V SOT-23 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BAV99 |
Taiwan Semiconductor |
Diodes (General Purpose, Power, Switching) 70 Volt 200mA 225mW |
Data Sheet |
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BAV99 /T3 |
NXP Semiconductors |
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Data Sheet |
Negotiable |
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BAV99,215 |
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Diodes (General Purpose, Power, Switching) SW DBL 75V 215MA HS |
Data Sheet |
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BAV99,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
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BAV99/8,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) HIGH-SPEED SWITCHING DIODES |
Data Sheet |
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BAV99/8,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SWTCH 100V 215mA |
Data Sheet |
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