Product Summary
The BSS84 is a P-channel enhancement mode field effect transistor.
Parametrics
BSS84 absolute maximum ratings: (1)VDSS, drain-source voltage: -50V; (2)VGSS, gate-source voltage: ±20V; (3)ID, drain current-continuous: -0.13A; pulsed: -0.52A; (4)PD, maximum power dissipation: 0.36W; Derate above 25℃: 2.9mW/℃; (5)TJ, TSTG, operating and storage junction temperature range: -55 to +150℃; (6)TL, maximum lead temperature for soldering purposes: 300℃.
Features
BSS84 features: (1)-0.13A, -50V, RDS=10Ω@VGS=-5V; (2)Voltage controlled p-channel small signal switch; (3)High density cell design for low RDS; (4)High saturation current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSS84 |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH ENHANCE |
Data Sheet |
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BSS84(Z) |
Other |
Data Sheet |
Negotiable |
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BSS84,215 |
NXP Semiconductors |
MOSFET P-CH DMOS 50V 130MA |
Data Sheet |
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BSS84_D87Z |
Fairchild Semiconductor |
MOSFET P-Ch Spec Enhance Mode Field Effect |
Data Sheet |
Negotiable |
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BSS84_Q |
Fairchild Semiconductor |
MOSFET P-Channel Enhance |
Data Sheet |
Negotiable |
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BSS8402DW |
Other |
Data Sheet |
Negotiable |
|
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BSS8402DW-7 |
Diodes Inc. |
MOSFET 60 / -50V 200mW |
Data Sheet |
Negotiable |
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BSS8402DW-7-F |
Diodes Inc. |
MOSFET 60 / -50V 200mW |
Data Sheet |
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