Product Summary

The FDN338P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor. The FDN338P is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The FDN338P is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.

Parametrics

FDN338P absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20V; (2)VGSS Gate-Source Voltage - Continuous: ±8V; (3)ID Drain/Output Current - Continuous: -1.6A; (4)- Pulsed: -5A; (5)PD Maximum Power Dissipation (Note 1a): 0.5W; (6)(Note 1b): 0.46W; (7)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.

Features

FDN338P features: (1)-1.6A, -20V, RDS(ON) = 0.13Ω@ VGS = -4.5V; (2)RDS(ON) = 0.18Ω@ VGS = -2.5V; (3)Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities; (4)High density cell design for extremely low RDS(ON); (5)Exceptional on-resistance and maximum DC current capability.

Diagrams

FDN338P Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDN338P
FDN338P
Fairchild Semiconductor
MOSFET SSOT-3 P-CH -20V
Data Sheet
0-1: $0.34
1-25: $0.24
25-100: $0.16
100-250: $0.11
FDN338P_Q
FDN338P_Q
Fairchild Semiconductor
MOSFET SSOT-3 P-CH -20V
Data Sheet
Negotiable