Product Summary
The FDN360 is a P-Channel Logic Level MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications of the FDN360 are DC/DC converter, Load switch and Motor drives.
Parametrics
FDN360 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current: -2 A; (4)PD Power Dissipation for Single Operation: 0.5 W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDN360 features: (1) -2 A, -30 V. RDS(on)= 0.080Ω @ VGS = -10 V; RDS(on)= 0.125Ω @ VGS = -4.5 V; (2)Low gate charge (5nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDN360P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH -30V |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDN302P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
|
|
|||||||||||||
FDN302P_Q |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
|
|
|||||||||||||
FDN304P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 1.8V |
Data Sheet |
|
|
|||||||||||||
FDN304PZ |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
|
|
|||||||||||||
FDN304PZ_Q |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
Negotiable |
|
|||||||||||||
FDN306P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
|
|