(Hong Kong)
Product Summary
The FDS2170N7 is a 200V N-Channel PowerTrench MOSFET. The FDS2170N7 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low side synchronous rectifier operation, providing an extremely low RDS (ON) in a small package. The applications of the FDS2170N7 include Synchronous rectifier, DC/DC converter.
Parametrics
FDS2170N7 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 200V; (2)VGSS Gate-Source Voltage: ±20V; (3)ID Drain Current – Continuous (Note 1a): 3.0A; (4)Pulsed: 20A; (5)PD Power Dissipation for Single Operation (Note 1a): 3.0W; (6)(Note 1b): 1.8W; (7)TJ, TSTG Operating and Storage Junction Temperature Range:–55 to +150℃.
Features
FDS2170N7 features: (1)3.0A, 200V RDS(ON) = 128mΩ @ VGS = 10V; (2)High performance trench technology for extremely low RDS(ON); (3)High power and current handling capability; (4)Fast switching, low gate charge (26nC typical); (5)FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS2170N7 |
Fairchild Semiconductor |
MOSFET 200V NCh PowerTrench |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FDS2070N3 |
Fairchild Semiconductor |
MOSFET 150V NCh PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS2070N7 |
Fairchild Semiconductor |
MOSFET 150V NCh PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS2170N3 |
Fairchild Semiconductor |
MOSFET 200V NCh PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS2170N7 |
Fairchild Semiconductor |
MOSFET 200V NCh PowerTrench |
Data Sheet |
Negotiable |
|
||||
 |
FDS252BG |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FDS252SG |
Other |
|
Data Sheet |
Negotiable |
|
||||
