(Hong Kong)
Product Summary
The FM1608-120-SG is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The FM1608-120-SG provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make the FM1608-120-SG superior to other types of nonvolatile memory.
Parametrics
FM1608-120-SG absolute maximum ratings: (1)Ambient storage or operating temperature: -40 to + 85℃; (2)Voltage on any pin with respect to ground: -1.0V to +7.0V; (3)Lead temperature (Soldering, 10 seconds): 300℃.
Features
FM1608-120-SG features: (1)Organized as 8,192 x 8 bits; (2)High endurance 10 Billion (1010) read/writes; (3)10 year data retention at 85℃; (4)NoDelay write; (5)Advanced high-reliability ferroelectric process; (6)No battery concerns; (7)Monolithic reliability; (8)True surface mount solution, no rework steps; (9)Superior for moisture, shock, and vibration; (10)Resistant to negative voltage undershoots; (11)JEDEC 8Kx8 SRAM & EEPROM pinout; (12)120 ns access time; (13)180 ns cycle time; (14)Equal access & cycle time for reads and writes; (15)15mA active current; (16)20μA standby current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM1608-120-SG |
Ramtron |
F-RAM 64K (8Kx8) 120ns 5V |
Data Sheet |
Negotiable |
|
||||
|
FM1608-120-SGTR |
Ramtron |
F-RAM 64K (8Kx8) 120ns 5V |
Data Sheet |
Negotiable |
|
||||
