Product Summary
The FM24C64-S is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C64-S performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The FM24C64-S provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement.
Parametrics
FM24C64-S absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any signal pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage temperature:-55℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model (JEDEC Std JESD22-A114-B):4kV, Machine Model (JEDEC Std JESD22-A115-A): 250V; (6) Package Moisture Sensitivity Level: MSL-1.
Features
FM24C64-S features: (1)Organized as 8,192 x 8 bits ; (2)High Endurance 1 Trillion (1012) Read/Writes ; (3)45 Year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz ; (9)5V operation ; (10)150μA Active Current (100 kHz) ; (11)10μA Standby Current ; (12)Industrial Temperature -40℃ to +85℃; (13)8-pin SOIC (-S); (14)“Green” 8-pin SOIC (-G).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
FM24C64-S |
Ramtron |
F-RAM 64K (8Kx8) 5V |
Data Sheet |
Negotiable |
|
|||||
FM24C64-STR |
Ramtron |
F-RAM 64K (8Kx8) 5V |
Data Sheet |
Negotiable |
|