Product Summary

The FQP13N50C is a 500V N-Channel MOSFET. The FQP13N50C is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP13N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQP13N50C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500V; (2)ID Drain Current - Continuous (TC = 25℃): 13A; (3)- Continuous (TC = 100℃): 8A; (4)IDM Drain Current - Pulsed (Note 1): 52A; (5)VGSS Gate-Source Voltage: ±30V; (6)EAS Single Pulsed Avalanche Energy (Note 2): 860mJ; (7)IAR Avalanche Current (Note 1): 13A; (8)EAR Repetitive Avalanche Energy (Note 1): 19.5mJ; (9)dv/dt Peak Diode Recovery dv/dt (Note 3): 4.5V/ns; (10)PD Power Dissipation (TC = 25℃): 195W; (11)Derate above 25℃: 1.56W/℃; (12)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (13)TL; (14)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

FQP13N50C features: (1)13A, 500V, RDS (on) = 0.48Ω@VGS = 10 V; (2) Low gate charge (typical 43nC); (3) Low Crss ( typical 20pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQP13N50C block diagram

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