(Hong Kong)
Product Summary
The FR220N is a HEXFET Power MOSFET. The applications of the FR220N include High frequency DC-DC converters, Lead-Free.
Parametrics
FR220N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 5.0A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 3.5A; (3)IDM Pulsed Drain Current: 20A; (4)PD @TC = 25℃ Power Dissipation: 43W; (5)Linear Derating Factor: 0.71 W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)dv/dt Peak Diode Recovery dv/dt: 7.5V/ns; (8)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ).
Features
FR220N features: (1) Low Gate to Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
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