HCF4066M013

Product Summary

The HCF4066M013 is a quad bilateral switch for transmission or multiplexing of analog or digital signals. It is fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4066M013 is pin for pin compatible with HCF4016B, but exhibits a much lower ON resistance. In addition, the ON resistance is relatively constant over the full input signal range. The HCF4066M013 consists of four independent bilateral switches. A single control signal is required per switch. Both the p and n device in a given switch are biased ON or OFF simultaneously by the control signal. As shown in schematic diagram, the well of the n-channel device on each switch is either tied to the input when the switch is ON or to VSS when the switch is OFF.

Parametrics

HCF4066M013 absolute maximum ratings: (1)VDD Supply Voltage: -0.5 to +22V; (2)VI DC Input Voltage: -0.5 to VDD + 0.5V; (3)II DC Input Current: ±10mA; (4)PD Power Dissipation per Package: 200mW; (5)Power Dissipation per Output Transistor: 100mW; (6)Top Operating Temperature: -55 to +125℃; (7)Tstg Storage Temperature: -65 to +150℃.

Features

HCF4066M013 features: (1)15V digitalor ±7.5V peak to peak switching; (2)125W typical on resistance for 15V operation; (3)switch on resistance matched to within 5W typ. over 15V signal input range; (4)on resistance flat over full peak to peak signal range; (5)high on/off output voltage ratio : 65dB TYP. at fIS = 10KHz, RL = 10KW; (6)high degree of linearity : ＜0.5% distortion TYP. at fIS = 1KHz, VIS = 5Vpp, VDD - VSS＞10V, RL = 10KW; (7)extremely low off switch leakage resulting in very low offset; (8)current and high effective off resistance : 10pA TYP. at VDD - VSS = 10V, Tamb = 25℃; (9)extremely high control input impedance (control circuit isolated from signal circuit 1012W typ.); (10)low crosstalk between switches : 50dB Typ. at fIS = 0.9MHz, RL = 1KW; (11)matched control - input to signal output capacitance : reduces output signal transients; (12)frequency response switch on : 40MHz (Typ.); (13)quiescent current specif. up to 20V; (14)5V, 10V and 15V parametric ratings; (15)INPUT LEAKAGE CURRENT; (16)II = 100nA (MAX) AT VDD = 18V TA = 25℃; (17)100% tested for quiescent current; (18)meets all requirements of JEDEC jesd13b ” standard specifications for description of b series CMOS devices”.

Diagrams