Product Summary
The IRF7101 is a HEXFET Power MOSFET. The applications of the IRF7101 include Synchronous MOSFET for Notebook Processor Power, Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.
Parametrics
IRF7101 absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 30V; (2)VGS Gate-to-Source Voltage: ±20V; (3)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 20A; (4)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 16A; (5)IDM Pulsed Drain Current: 160A; (6)PD @TA = 25℃ Power Dissipation: 2.5W; (7)PD @TA = 70℃ Power Dissipation: 1.6W; (8)Linear Derating Factor: 0.02W/℃; (9)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +155℃.
Features
IRF7101 features: (1)Very Low RDS(on) at 4.5V VGS; (2)Ultra-Low Gate Impedance; (3)Fully Characterized Avalanche Voltage and Current; (4)20V VGS Max. Gate Rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7101TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 20V 3.5A |
Data Sheet |
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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