(Hong Kong)
Product Summary
The IRF7303 is a HEXFET power MOSFET. The IRF7303 utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Parametrics
IRF7303 absolute maximum ratings: (1)ID @ TA=25℃ 10 Sec. Pulsed Drain Current, VGS @10V: 5.3A; (2)ID @ TA=25℃ Continuous Drain Current, VGS @10V: 4.9A; (3)ID @ TA=70℃ Continuous Drain Current, VGS @10V: 3.9A; (4)IDM Pulsed Drain Current: 20A; (5)PD @ TA=25℃ Power Dissipation: 2.0W; (6)PD @ TA=25℃ Linear Derating Factor: 0.016W/℃; (7)VGS Gate-to-Source Voltage: ±20V; (8)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (9)Junction and Storage Temperature Range: -55℃ to 150℃.
Features
IRF7303 features: (1)Generation V Technology; (2)Ultra Low On-resistance; (3)Dual N-channel Mosfet; (4)Surface Mount; (5)Available in Tape and Reel ; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF7303 |
Other |
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Data Sheet |
Negotiable |
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IRF7303PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7303QPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7303QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7303Q |
Other |
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Data Sheet |
Negotiable |
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IRF7303TR |
International Rectifier |
MOSFET 2N-CH 30V 4.9A 8-SOIC |
Data Sheet |
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IRF7303TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 30V 4.9A |
Data Sheet |
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