(Hong Kong)
Product Summary
The IRF7404TR is a HEXFET Power MOSFET. The IRF7404TR utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making the IRF7404TR ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parametrics
IRF7404TR absolute maximum ratings: (1)ID @ TA = 25℃ 10 Sec. Pulsed Drain Current, VGS @ -4.5V: -7.7A; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -6.7A; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ -4.5V: -5.4A; (4)IDM Pulsed Drain Current: -27A; (5)PD @TA = 25℃ Power Dissipation: 2.5W; (6)Linear Derating Factor: 0.02W/℃; (7)VGS Gate-to-Source Voltage: ±12 V; (8)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (9)TJ, TSTG Junction and Storage Temperature Range: -55℃ to + 150℃.
Features
IRF7404TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.
Diagrams
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 IRF7404TR |
International Rectifier |
MOSFET P-CH 20V 6.7A 8-SOIC |
Data Sheet |
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IRF7404TRPBF |
International Rectifier |
MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC |
Data Sheet |
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