(Hong Kong)
Product Summary
The IRF7807 is a Chip-Set for DC-DC Converters. The IRF7807 employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807 devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V.
Parametrics
IRF7807 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source 25℃ ID: 8.3A; (4)Current (VGS 3 4.5V) 70℃: 6.6A; (5) Pulsed Drain Current. IDM: 66A; (6)Power Dissipation 25℃ PD: 2.5W; 70℃: 1.6W; (7)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (8) Continuous Source Current (Body Diode). IS: 2.5A; (9) Pulsed source Current ISM: 66A.
Features
IRF7807 features: (1)N Channel Application Specific MOSFETs; (2)Ideal for Mobile DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF7807 |
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MOSFET N-CH 30V 8.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7807A |
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MOSFET N-CH 30V 8.3A 8-SOIC |
Data Sheet |
Negotiable |
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 |
IRF7807ATRPBF |
International Rectifier |
MOSFET MOSFT 30V 6.6A 25mOhm 12nC |
Data Sheet |
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IRF7807APBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7807ATR |
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MOSFET N-CH 30V 8.3A 8-SOIC |
Data Sheet |
Negotiable |
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 |
IRF7807D1 |
International Rectifier |
MOSFET N-CH 30V 8.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7807D1TRPBF |
International Rectifier |
MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC |
Data Sheet |
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IRF7807D2TRPBF |
International Rectifier |
MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC |
Data Sheet |
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