(Hong Kong)
Product Summary
The IRF7809A is a Chipset for DC-DC Converter. The IRF7809A employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The package of the IRF7809A is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
Parametrics
IRF7809A absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source TA = 25℃ ID: 14.5A; (4)Current (VGS 3 4.5V) TL = 90℃: 14.2A; (5)Pulsed Drain Current. IDM: 100A; (6)Power Dissipation TA = 25℃ PD: 2.5W; (7)TL = 90℃: 2.4W; (8)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (9)Continuous Source Current (Body Diode) IS: 2.5A; (10)Pulsed Source Current. ISM: 50A.
Features
IRF7809A features: (1)N-Channel Application-Specific MOSFETs; (2)Ideal for CPU Core DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses; (5)Minimizes Parallel MOSFETs for high current applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF7809A |
International Rectifier |
HEX/MOS N-CH 30V 14.5A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7809ATR |
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MOSFET N-CH 30V 14.5A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7809AVTRPBF |
International Rectifier |
MOSFET MOSFT 30V 13.3A 9mOhm 41nC |
Data Sheet |
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IRF7809AVPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7809AV |
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MOSFET N-CH 30V 13.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7809AVTR |
International Rectifier |
MOSFET N-CH 30V 13.3A 8-SOIC |
Data Sheet |
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