(Hong Kong)
Product Summary
The IRF7811A is a HEXFET Chipset for DC-DC Converters. It employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make the IRF7811A ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
Parametrics
IRF7811A absolute maximum ratings: (1)Drain-Source Voltage VDS: 28 V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source Current, ID: 14.5A; (4)Pulsed Drain Current IDM: 100A; (5)Power Dissipation, PD: 2.5 W; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (7)Continuous Source Current (Body Diode) IS: 2.5 A; (8) Pulsed Source Current ISM: 50A.
Features
IRF7811A features: (1)N-Channel Application-Specific MOSFETs; (2)Ideal for CPU Core DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses; (5)Minimizes Parallel MOSFETs for high current applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF7811A |
|
MOSFET N-CH 28V 11.4A 8-SOIC |
Data Sheet |
Negotiable |
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|
IRF7811APBF |
|
MOSFET N-CH 28V 11A 8-SOIC |
Data Sheet |
Negotiable |
|
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 |
IRF7811AVPBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
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|
IRF7811ATR |
|
MOSFET N-CH 28V 11.4A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
IRF7811ATRPBF |
|
MOSFET N-CH 28V 11A 8-SOIC |
Data Sheet |
Negotiable |
|
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 |
IRF7811AV |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF7811AVTRPBF |
International Rectifier |
MOSFET MOSFT 30V 14A 14mOhm 17nC |
Data Sheet |
|
|
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|
IRF7811AVTR |
|
MOSFET N-CH 30V 10.8A 8-SOIC |
Data Sheet |
Negotiable |
|
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