IRFR3910TR

IRFR3910TR, HEXFET Power MOSFET, 16A, 150mJ, 79W, SOP, International Rectifier

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PartNumber:: IRFR3910TR

Brand:: International Rectifier - IR | Pack: SOP | D/C: 12+

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Products Upload time: 2012-12-07

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Part Number:IRFR3910TR
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Product Summary

The IRFR3910TR is a HEXFET Power MOSFET. The IRFR3910TR utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. The design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFR3910TR absolute maximum ratings: (1)ID @ TC = 25°C Continuous Drain Current, VGS @ 10V: 16A; (2)ID @ TC = 100°C Continuous Drain Current, VGS @ 10V: 12A; (3)IDM Pulsed Drain Current: 60A; (4)PD @TC = 25°C Power Dissipation: 79W; (5)Linear Derating Factor: 0.53W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)EAS Single Pulse Avalanche Energy: 150mJ; (8)IAR Avalanche Current: 9.0A; (9)EAR Repetitive Avalanche Energy: 7.9mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (11)TJ Operating Junction and TSTG Storage Temperature Range: -55℃ to + 175℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ).

Features

IRFR3910TR features: (1) Ultra Low On-Resistance; (2) Surface Mount (IRFR3910); (3) Straight Lead (IRFU3910); (4) Advanced Process Technology; (5) Fast Switching; (6) Fully Avalanche Rated.