(Hong Kong)
Product Summary
The FDS6890A is a Dual N-Channel 2.5V Specified PowerTrench MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The applications of the FDS6890A include DC/DC converter, Motor drives.
Parametrics
FDS6890A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20V; (2)VGSS Gate-Source Voltage: ±8V; (3)ID Drain Current - Continuous (Note 1a): 7.5A; (4)Pulsed: 20A; (5)Power Dissipation for Dual Operation: 2.0W; (6)Power Dissipation for Single Operation (Note 1a): 1.6W; (7)(Note 1b): 1.0W; (8)PD (Note 1c): 0.9W; (9)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS6890A features: (1)7.5A, 20V RDS(ON) = 0.018Ω@ VGS = 4.5V, RDS(ON) = 0.022Ω@ VGS = 2.5V; (2)Low gate charge (23nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS6890A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 20V |
Data Sheet |
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FDS602SP |
Other |
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Data Sheet |
Negotiable |
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FDS602ST |
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Data Sheet |
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FDS602TX |
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Data Sheet |
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Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench Fast Switching |
Data Sheet |
Negotiable |
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FDS6375 |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -20V |
Data Sheet |
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FDS6575 |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -20V |
Data Sheet |
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